196 citations · 695 across the 22 of their papers we have counts for
22 papers
NiSi as seed layer for epitaxial growth of NiAl and Cr on Si(001)
Mohamed Ben Chroud, Thu-Huong Thi Tran, Johan Swerts +2
In general, metal layers cannot be grown epitaxially on Si due to the tendency of metals to react and form a silicide. Even in case the metal layer has a matching lattice symmetry…
Correlation between structural and magnetic properties of epitaxial YIG films by pulsed laser deposition
José Diogo Costa, N. Claessens, Giacomo Talmelli +6
In this study, we investigate the relationships between film growth conditions, crystalline microstructure, and magnetic properties of epitaxial Yttrium Iron Garnet (YFeO$_…
Selecting Alternative Metals for Advanced Interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, Benoit Van Troeye +14
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect s…
CuAl films as Alternatives to Copper for Advanced Interconnect Metallization
Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois +3
CuAl thin films with have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…
Microwave Properties of Ba-Substituted Pb(ZrTi)O after Chemical-Mechanical Polishing
Federica Luciano, Lieve Teugels, Sean McMitchell +13
We have studied the effect of chemical-mechanical polishing (CMP) on the ferroelectric, piezoelectric, and microwave dielectric properties of Ba-substituted PZT (BPZT), deposited b…