activity
20002025
most citedSOT-MRAM 300mm integration for low power and ultrafast embedded memories

196 citations · 695 across the 22 of their papers we have counts for

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Showing 2017Show all

4 papers · 1 filter

physics.app-ph2017★ 12 cited

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Danny Wan, Mauricio Manfrini, Adrien Vaysset +16

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independen…

cond-mat.mtrl-sci2017★ 13 cited

Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

T. Devolder, S. Couet, J. Swerts +5

We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni…

cond-mat.mtrl-sci2017★ 35 cited

Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

Thibaut Devolder, Joo-Von Kim, J. Swerts +6

We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque opera…

cond-mat.mtrl-sci2017★ 22 cited

Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy

Enlong Liu, J. Swerts, T. Devolder +10

[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied t…