22 citations · 65 across the 9 of their papers we have counts for
11 papers · 1 filter
NiSi as seed layer for epitaxial growth of NiAl and Cr on Si(001)
Mohamed Ben Chroud, Thu-Huong Thi Tran, Johan Swerts +2
In general, metal layers cannot be grown epitaxially on Si due to the tendency of metals to react and form a silicide. Even in case the metal layer has a matching lattice symmetry…
Correlation between structural and magnetic properties of epitaxial YIG films by pulsed laser deposition
José Diogo Costa, N. Claessens, Giacomo Talmelli +6
In this study, we investigate the relationships between film growth conditions, crystalline microstructure, and magnetic properties of epitaxial Yttrium Iron Garnet (YFeO$_…
CuAl films as Alternatives to Copper for Advanced Interconnect Metallization
Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois +3
CuAl thin films with have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…
Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers
T. Devolder, S. Couet, J. Swerts +3
To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotrop…
Offset fields in perpendicularly magnetized tunnel junctions
T. Devolder, R. Carpenter, S. Rao +4
We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange…