2 papers
physics.app-ph2019
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
K. Garello, F. Yasin, H. Hody +14
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonst…
cond-mat.mtrl-sci2017
Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells
Thibaut Devolder, Joo-Von Kim, J. Swerts +6
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque opera…