Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions
arXiv:2006.05108 · doi:10.1103/PhysRevB.102.184406
Abstract
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hopping. Studying several material variants reveals that the back-hopping is a feature of the nominally fixed system of the tunnel junction. The back-hopping is found to proceed by two sequential switching events that lead to a final state P' of conductance close to --but distinct from-- that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back-hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back-hopping that were implemented empirically in spin-transfer-torque magnetic random access memories.
arXiv commentsubmitted to Phys Rev. B
References in corpus (13)
- Currents, Torques, and Polarization Factors in Magnetic Tunnel Junctions
- Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
- Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
- Size-dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions
- Time-Resolved Studies of the Spin-Transfer Reversal Mechanism in Perpendicularly Magnetized Magnetic Tunnel Junctions
- Back hopping in spin-transfer-torque devices, possible origin and counter measures
- Interface moment dynamics and its contribution to spin-transfer torque switching process in magnetic tunnel junctions
- Offset fields in perpendicularly magnetized tunnel junctions
- Ferromagnetic resonance of exchange-coupled perpendicularly magnetized bilayers
- Evolution of perpendicular magnetized tunnel junctions upon annealing
- Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system
- Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment
- Spin-wave thermal population as temperature probe in Magnetic Tunnel Junctions
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- Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior
- Intrinsic back-switching phenomenon in SOT-MRAM devices
- Efficient solution strategy to couple micromagnetic simulations with ballistic transport in magnetic tunnel junctions
- Controlled Quasi-Latitudinal Solutions for ultra-fast Spin-Torque Precessional Magnetization Switching