291 citations · 764 across the 19 of their papers we have counts for
3 papers · 1 filter
Impact of external magnetic fields on STT-MRAM
Bernard Dieny, Sanjeev Aggarwal, Vinayak Bharat Naik +15
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-M…
Spin-orbit torque switching of magnetic tunnel junctions for memory application
Viola Krizakova, Manu Perumkunnil, Sebastien Couet +2
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic m…
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Danny Wan, Mauricio Manfrini, Adrien Vaysset +16
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independen…