291 citations · 442 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci2023
A quantum sensing metrology for magnetic memories
Vicent J Borràs, Robert Carpenter, Liza Žaper +5
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling…
cond-mat.mes-hall2023★ 40 cited
Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Vaishnavi Kateel, Viola Krizakova, Siddharth Rao +10
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memo…