activity
20132026
most citedUltrafast magnetization switching by spin-orbit torques

515 citations · 1.1k across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.str-el2026

Strain-tunable charge localization coupled to complex magnetic orders in EuAl

M. Baumgartner, Xunyang Hong, Tianren Wang +19

Charge localization is particularly interesting when coupled to antiferromagnetic spin structures. Coupled spin-charge orders are well established in elemental chromium and correla…

physics.app-ph2020★ 33 cited

Effects of Oxidation of Top and Bottom Interfaces on the Electric, Magnetic, and Spin-Orbit Torque Properties of Pt/Co/AlOx Trilayers

Junxiao Feng, Eva Grimaldi, Can Onur Avci +4

Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical propert…

cond-mat.mes-hall2020★ 35 cited

Chiral Domain Wall Injector Driven by Spin-orbit Torques

T. Phuong Dao, Marvin Müller, Zhaochu Luo +4

Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the ch…

cond-mat.mtrl-sci2019★ 17 cited

X-ray spectroscopy of current-induced spin-orbit torques and spin accumulation in Pt/3d transition metal bilayers

C. Stamm, C. Murer, Y. Acremann +10

An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charg…

cond-mat.mes-hall2018★ 22 cited

Asymmetric velocity and tilt angle of domain walls induced by spin-orbit torques

Manuel Baumgartner, Pietro Gambardella

We present a micromagnetic study of the current-induced domain wall motion in perpendicularly magnetized Pt/Co/AlOx racetracks. We show that the domain wall velocity depends critic…

cond-mat.mes-hall2018★ 196 cited

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

K. Garello, F. Yasin, S. Couet +16

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectu…