196 citations · 250 across the 5 of their papers we have counts for
5 papers
Impact of FeB insertion on the properties of dual-MgO perpendicular magnetic tunnel junctions
Enlong Liu, Taeyoung Lee, Hyunsoo Yang
We explore the impact of Fe80B20 inserted at both CoFeB/MgO interfaces of dual-MgO free layers (FLs) in bottom-pinned magnetic tunnel junctions (MTJs). MTJ sta…
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K. Garello, F. Yasin, S. Couet +16
We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectu…
Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system
T. Devolder, S. Couet, J. Swerts +5
We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni…
Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy
Enlong Liu, J. Swerts, T. Devolder +10
[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied t…
Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy
T. Devolder, E. Liu, J. Swerts +6
We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W…