Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy
arXiv:1501.02294 · doi:10.1063/1.4916665
Abstract
Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this structure suggesting that the interface play a significant role in Rashba-like torque.
References in corpus (17)
- Spin torque switching with the giant spin Hall effect of tantalum
- Magnetic switching by spin torque from the spin Hall effect
- Current-driven dynamics of chiral ferromagnetic domain walls
- Symmetry and magnitude of spin-orbit torques in ferromagnetic heterostructures
- Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO
- Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
- High spin polarization in epitaxial films of ferrimagnetic Mn3Ga
- Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer
- Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers
- Light-induced magnetization reversal of high-anisotropy TbCo alloy films
- Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers
- Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic
- Chemical Composition Tuning of the Anomalous Hall Effect in Isoelectronic L10 FePd1-xPtx Alloy Films
- Chiral magnetization textures stabilized by the Dzyaloshinskii-Moriya interaction during spin-orbit torque switching
- Strain-induced enhancement of coercivity in amorphous TbFeCo films
- Perpendicularly magnetized Mn-Co-Ga-based thin films with high coercive field
- Asymmetry in effective fields of spin-orbit torques in Pt/Co/Pt stacks
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