activity
20142021
most citedRoom-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

503 citations · 861 across the 17 of their papers we have counts for

collaborators

18 papers

cs.CR2021

Towards Homomorphic Inference Beyond the Edge

Salonik Resch, Zamshed I. Chowdhury, Husrev Cilasun +5

Beyond edge devices can function off the power grid and without batteries, enabling them to operate in difficult to access regions. However, energy costly long-distance communicati…

cond-mat.mes-hall2021★ 9 cited

Thermal Contribution in the Electrical Switching Experiments with Heavy Metal / Antiferromagnet Structures

Peng Sheng, Zhengyang Zhao, Onri Jay Benally +2

We examine the thermal origin of the detected "saw-tooth" shaped Hall resistance (Rxy) signals in the spin-orbit torque switching experiment for antiferromagnetic MnN. Compared wit…

cs.AR2021

Exploring the Feasibility of Using 3D XPoint as an In-Memory Computing Accelerator

Masoud Zabihi, Salonik Resch, Husrev Cılasun +5

This paper describes how 3D XPoint memory arrays can be used as in-memory computing accelerators. We first show that thresholded matrix-vector multiplication (TMVM), the fundamenta…

cond-mat.mes-hall2021★ 4 cited

Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

Dhritiman Bhattacharya, Peng Sheng, Md Ahsanul Abeed +6

We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances…

cs.ET2020★ 8 cited

An Inference and Learning Engine for Spiking Neural Networks in Computational RAM (CRAM)

Hüsrev Cılasun, Salonik Resch, Zamshed I. Chowdhury +8

Spiking Neural Networks (SNN) represent a biologically inspired computation model capable of emulating neural computation in human brain and brain-like structures. The main promise…

physics.app-ph2019★ 2 cited

Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling

Delin Zhang, Mukund Bapna, Wei Jiang +10

Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-contro…

cs.ET2019★ 2 cited

A Machine Learning Accelerator In-Memory for Energy Harvesting

Salonik Resch, S. Karen Khatamifard, Zamshed Iqbal Chowdhury +5

There is increasing demand to bring machine learning capabilities to low power devices. By integrating the computational power of machine learning with the deployment capabilities…

cs.AR2018★ 3 cited

Computational RAM to Accelerate String Matching at Scale

Zamshed I. Chowdhury, S. Karen Khatamifard, Zhengyang Zhao +6

Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to…

cs.ET2018★ 4 cited

PIMBALL: Binary Neural Networks in Spintronic Memory

Salonik Resch, S. Karen Khatamifard, Zamshed Iqbal Chowdhury +5

Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for perform…

cs.ET2018★ 45 cited

SkyLogic - A proposal for a skyrmion logic device

Meghna G. Mankalale, Zhengyang Zhao, Jian-Ping Wang +1

This work proposes a novel logic device (SkyLogic) based on skyrmions, which are magnetic vortex-like structures that have low depinning current density and are robust to defects.…

physics.app-ph2018★ 4 cited

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques

Mengxing Wang, Wenlong Cai, Daoqian Zhu +11

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…

cond-mat.mtrl-sci2018★ 34 cited

L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

De-Lin Zhang, Congli Sun, Yang Lv +5

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic m…

cond-mat.mes-hall2017★ 503 cited

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

Mahendra DC, Mahdi Jamali, Jun-Yang Chen +9

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We…

cs.ET2016

CoMET: Composite-Input Magnetoelectric-based Logic Technology

Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao +3

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a com…

cond-mat.mtrl-sci2016★ 14 cited

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure

Zhengyang Zhao, Angeline Klemm Smith, Mahdi Jamali +1

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. Howev…

cond-mat.mes-hall2016★ 100 cited

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Zhengyang Zhao, Mahdi Jamali, Noel D'Souza +4

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we d…

cond-mat.mes-hall2015★ 122 cited

Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy

Zhengyang Zhao, Mahdi Jamali, Angeline Klemm +1

Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization swit…

cond-mat.mes-hall2014★ 7 cited

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Mahdi Jamali, Joon Sue Lee, Yang Lv +3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentiall…