Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Abstract

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

References in corpus (4)

• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Weak localization of bulk channels in topological insulator thin film
• Observation of inverse spin Hall effect in bismuth selenide
• Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

Cited by in corpus (4)

• Interface-Induced Phenomena in Magnetism
• Electric-field control of spin-orbit torque in a magnetically doped topological insulator
• Topological Surface States Originated Spin-Orbit Torques in Bi2Se3
• Spin-charge transport driven by magnetization dynamics on disordered surface of doped topological insulators