Observation of inverse spin Hall effect in bismuth selenide

Abstract

Bismuth Selenide (Bi2Se3) is a topological insulator exhibiting helical spin polarization and strong spin-orbit coupling. The spin-orbit coupling links the charge current to spin current via the spin Hall effect (SHE). We demonstrate a Bi2Se3 spin detector by injecting the pure spin current from a magnetic permalloy layer to a Bi2Se3 thin film and detect the inverse SHE in Bi2Se3. The spin Hall angle of Bi2Se3 is found to be 0.0093 and the spin diffusion length in Bi2Se3 to be 6.2 nm at room temperature. Our results suggest that topological insulators with strong spin-orbit coupling can be used in functional spintronic devices.

References in corpus (11)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Dissipationless Quantum Spin Current at Room Temperature
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Microwave photovoltage and photoresistance effects in ferromagnetic microstrips
• Spin Hall Angle Quantification from Spin Pumping and Microwave Photoresistance
• Enhancement of the Gilbert damping constant due to spin pumping in noncollinear ferromagnet/nonmagnet/ferromagnet trilayer systems

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