Fermi Level Dependent Spin Pumping from a Magnetic Insulator into a Topological Insulator
arXiv:1906.11116 · doi:10.1103/PhysRevResearch.1.012014
Abstract
Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pumping in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein "bulk-surface correspondence" allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spin-momentum locking of the surface state.
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Cited by in corpus (15)
- Electrical control of magnetism by electric field and current-induced torques
- Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
- Spin and charge interconversion in Dirac semimetal thin films
- Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
- Light and microwave driven spin pumping across FeGaB-BiSb interface
- Non-Contact Spin Pumping by Microwave Evanescent Fields
- All-electrical Magnon Transport Experiments in Magnetically Ordered Insulators
- Giant spin torque efficiency in naturally oxidized polycrystalline TaAs thin films
- Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes
- Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures
- Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
- Spin Hall conductivity in BiSb as an experimental test of bulk-boundary correspondence
- Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
- Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
- Tracing Dirac points of topological surface states by ferromagnetic resonance