Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

Abstract

Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure.

References in corpus (10)

• Spin Transfer Torques
• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Transparent perovskite barium stannate with high electron mobility and thermal stability
• Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
• Giant anisotropy of Gilbert damping in epitaxial CoFe films
• Magnetization and Anisotropy of Cobalt Ferrite Thin Films
• Evaluation of spin diffusion length and spin Hall angle of antiferromagnetic Weyl semimetal Mn${}_3$Sn
• Distortion of the Stoner-Wohlfarth astroid by a spin-polarized current
• Mn4N ferrimagnetic thin films for sustainable spintronics