122 citations · 452 across the 14 of their papers we have counts for
14 papers
Epitaxial high-K AlBN barrier GaN HEMTs
Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto +8
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize u…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…
Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
Len van Deurzen, Thai-Son Nguyen, Joseph Casamento +2
We demonstrate epitaxial lattice-matched AlScN/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma…
The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric AlBN
Yongtao Liu, Anton Ievlev, Joseph Casamento +5
Polarization dynamics and domain structure evolution in ferroelectric AlBN are studied using piezoresponse force microscopy and spectroscopies in ambient and cont…
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
Epitaxial ScAlN on GaN is a High K Dielectric
Joseph Casamento, Hyunjea Lee, Takuya Maeda +7
Epitaxial ScAlN thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity () values relative to AlN.…
Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures
Joseph Casamento, Ved Gund, Hyunjea Lee +11
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial fil…
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…
Oxygen Incorporation in the MBE growth of ScxGa1-xN and ScxAl1-xN
Joseph Casamento, Huili Grace Xing, Debdeep Jena
Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructure…
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory
Xiang Li, Phillip Dang, Joseph Casamento +8
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large…
Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
Joseph Casamento, John Wright, Reet Chaudhuri +2
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered…
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Debdeep Jena, Ryan Page, Joseph Casamento +7
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologi…