Epitaxial Sc${}_x$Al${}_{1-x}$N on GaN is a High K Dielectric

Abstract

Epitaxial Sc${}_x$Al${}_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity (${\epsilon }_r$) values relative to AlN. ${\epsilon }_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc${}_x$Al${}_{1-x}$N has the largest relative dielectric permittivity of any existing nitride material. This points toward the usage of Sc${}_x$Al${}_{1-x}$N as potential epitaxial, single-crystalline dielectric material that can be deposited in situ on GaN and AlN electronic and photonic devices for enhanced performance.

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Cited by in corpus (3)

• High Mobility Multiple-Channel AlScN/GaN Heterostructures
• Heterostructure Engineering for Wurtzite LaN
• Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis