19 citations · 28 across the 2 of their papers we have counts for
5 papers
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in -GaO
Wenshen Li, Kazuki Nomoto, Debdeep Jena +1
The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field…
Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Shyam Bharadwaj, Zongyang Hu +4
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-pol…
Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto +6
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind…
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Zongyang Hu, Kazuki Nomoto +2
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…
Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs
Amit Verma, Kazuki Nomoto, Wan Sik Hwang +3
Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide hete…