19 citations · 43 across the 4 of their papers we have counts for
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N-polar GaN p-n junction diodes with low ideality factors
Kazuki Nomoto, Huili Grace Xing, Debdeep Jena +1
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage charac…
Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures
Joseph Casamento, Ved Gund, Hyunjea Lee +11
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial fil…
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Zongyang Hu, Kazuki Nomoto +2
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…