Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

Abstract

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off current ratio and interband photon emission. The measured electroluminescence spectrum is dominated by strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.

13 pages, 3 figures, to appear in Applied Physics Letters

Cited by in corpus (3)

• N-polar GaN p-n junction diodes with low ideality factors
• Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
• Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy