122 citations · 241 across the 8 of their papers we have counts for
8 papers
Infrared dielectric functions and Brillouin zone center phonons of -GaO compared to -AlO
Megan Stokey, Rafal Korlacki, Matthew Hilfiker +11
We determine the anisotropic dielectric functions of rhombohedral -GaO by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse opti…
Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3
Matthew Hilfiker, Rafał Korlacki, Riena Jinno +6
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an -GaO…
N-polar GaN/AlN resonant tunneling diodes
YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV -(AlGa)O on m-plane sapphire
Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Debdeep Jena, Ryan Page, Joseph Casamento +7
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologi…
Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Shyam Bharadwaj, Zongyang Hu +4
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-pol…
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Zongyang Hu, Kazuki Nomoto +2
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…