122 citations · 241 across the 8 of their papers we have counts for
6 papers · 1 filter
Infrared dielectric functions and Brillouin zone center phonons of -GaO compared to -AlO
Megan Stokey, Rafal Korlacki, Matthew Hilfiker +11
We determine the anisotropic dielectric functions of rhombohedral -GaO by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse opti…
Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3
Matthew Hilfiker, Rafał Korlacki, Riena Jinno +6
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an -GaO…
N-polar GaN/AlN resonant tunneling diodes
YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…
Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy
Ryan Page, Yongjin Cho, Joseph Casamento +3
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes…
The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Debdeep Jena, Ryan Page, Joseph Casamento +7
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologi…
Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy
YongJin Cho, Zongyang Hu, Kazuki Nomoto +2
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-qualit…