The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System

Abstract

The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.

arXiv comment16 pages, 3 figures

References in corpus (12)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Hexagonal boron nitride is an indirect bandgap semiconductor
• AlScN: A III-V semiconductor based ferroelectric
• Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
• Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides
• Bright luminescence from indirect and strongly bound excitons in hBN
• Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas
• Tuning the piezoelectric and mechanical properties of the AlN system via alloying with YN and BN
• Europium nitride: A novel diluted magnetic semiconductor
• Stretching magnetism with an electric field in a nitride semiconductor
• Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
• Observation of Giant Exchange Bias and Topological Hall Effect in Manganese Nitride Films

Cited by in corpus (16)

• Ternary Nitride Materials: Fundamentals and Emerging Device Applications
• Oxygen Incorporation in the MBE growth of ScxGa1-xN and ScxAl1-xN
• Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films
• Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
• An unexplored MBE growth mode reveals new properties of superconducting NbN
• N-polar GaN/AlN resonant tunneling diodes
• Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction
• Spin-orbit coupling controlling the superconducting dome of artificial superlattices of quantum wells
• Ferroelectric AlBN Films by Molecular Beam Epitaxy
• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
• ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
• Canted Antiferromagnetism in Polar MnSiN${}_2$ with High Néel Temperature
• Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
• Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence
• Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction
• Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy