122 citations · 166 across the 7 of their papers we have counts for
7 papers
Generalized quantum limits of electrical contact resistance and thermal boundary resistance
Alice Ho, Jashan Singhal, Deji Akinwande +2
The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materi…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
Jashan Singhal, Jimy Encomendero, Yongjin Cho +6
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidatio…
Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei +7
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular b…
A unified ballistic transport relation for anisotropic dispersions and generalized dimensions
Jashan Singhal, Debdeep Jena
An analytical formula is derived for particle and energy densities of fermions and bosons, and their ballistic momentum and energy currents for anisotropic energy dispersions in ge…
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…