122 citations · 126 across the 3 of their papers we have counts for
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Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei +7
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular b…
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…
The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Debdeep Jena, Ryan Page, Joseph Casamento +7
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologi…