Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

Abstract

Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

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Cited by in corpus (12)

• Intrinsic ferroelectricity in Y-doped HfO2 thin films
• Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
• Stabilization of competing ferroelectric phases of HfO${}_2$ under epitaxial strain
• Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
• Progress in Computational Understanding of Ferroelectric Mechanisms in HfO${}_2$
• Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films
• Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
• Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy
• Epitaxial ferroelectric hafnia stabilized by symmetry constraints
• Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films
• Structural modulation in potassium birnessite single crystals
• Guidelines for the optimization of hafnia-based ferroelectrics through superlattice engineering