122 citations · 221 across the 7 of their papers we have counts for
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cond-mat.mtrl-sci2020
N-polar GaN/AlN resonant tunneling diodes
YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…
physics.app-ph2020★ 2 cited
Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV -(AlGa)O on m-plane sapphire
Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…