Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy

Abstract

Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have high structural and optical properties as verified by X-ray diffraction and spatially resolved cathodoluminescence measurements. The processed LEDs reveal clear rectifying behavior with a low contact and buried tunnel junction resistivity. By virtue of the top n+-GaN layer with a low resistance, excellent current spreading in the LEDs is observed at low currents in this device structure. A few of new device possibilities based on this unique design are discussed.

References in corpus (2)

• InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes
• Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

Cited by in corpus (3)

• Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
• N-polar GaN p-n junction diodes with low ideality factors
• Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy