InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

Abstract

InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED device resistance is limited by the regrowth interface and not by the intrinsic tunneling resistance.

References in corpus (4)

• Polarization-engineered GaN/InGaN/GaN tunnel diodes
• Low Resistance GaN/InGaN/GaN Tunnel Junctions
• GdN Nanoisland-Based GaN Tunnel Junctions
• Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

Cited by in corpus (7)

• Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
• Tunnel Junction Enhanced Nanowire Ultraviolet Light Emitting Diodes
• Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
• Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
• Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs
• Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
• Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy