313 citations · 3.6k across the 69 of their papers we have counts for
70 papers
Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
Jonathan Pratt, Yizheng Liu, Ijaas Mohamed +8
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling…
4 MV/cm (010) -GaO Heterojunction Diodes Realized by Low-Damage e-Beam NiO Interlayers
Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3
We report on the utilization of a low-damage e-beam NiO deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) -GaO films with high crit…
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2
Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) Epitaxial Layers
Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2
We report on the experimental observation of up to 11.5 deep charge depletion in (010), (110), and (011) epitaxial layers due to ion damage from sputtering and ind…
Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3
Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy
We present MOCVD-grown, nitrogen-doped \b{eta}-Ga2O3 films as an insulating buffer layer on Fe-doped (010) \b{eta}-Ga2O3 substrates in lieu of 49% HF treatment to remove unintentio…
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…