313 citations · 3.6k across the 69 of their papers we have counts for
5 papers · 1 filter
Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs
Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy +4
The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures ar…
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance…
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Sanyam Bajaj, Omor F. Shoron, Pil Sung Park +7
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements…
Layer-Transferred MoS2/GaN PN Diodes
Edwin W. Lee, Choong Hee Lee, Pran K. Paul +6
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Dev…
Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson +6
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region ne…