Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Abstract

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

References in corpus (1)

• Intrinsic Electron Mobility Limits in beta-Ga2O3

Cited by in corpus (2)

• Highly tunable polarization-engineered two-dimensional electron gas in $\epsilon$-AlGaO3 / $\epsilon$-Ga2O3 heterostructures
• Zeeman Spin-Splitting in the (010) $\beta$-Ga2O3 Two-Dimensional Electron Gas