313 citations · 361 across the 4 of their papers we have counts for
6 papers
Strain and composition dependencies of the near bandgap optical transitions in monoclinic (AlGa)O alloys with coherent biaxial in-plane strain on (010) GaO
Rafał Korlacki, Matthew Hilfiker, Jenna Knudtson +7
The bowing of the energy of the three lowest band-to-band transitions in -(AlGa)O alloys was resolved using a combined density functional theory (DFT) and…
Zeeman Spin-Splitting in the (010) -Ga2O3 Two-Dimensional Electron Gas
Adam T. Neal, Yuewei Zhang, Said Elhamri +2
Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau level…
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…