313 citations · 815 across the 13 of their papers we have counts for
13 papers
Strain and composition dependencies of the near bandgap optical transitions in monoclinic (AlGa)O alloys with coherent biaxial in-plane strain on (010) GaO
Rafał Korlacki, Matthew Hilfiker, Jenna Knudtson +7
The bowing of the energy of the three lowest band-to-band transitions in -(AlGa)O alloys was resolved using a combined density functional theory (DFT) and…
Zeeman Spin-Splitting in the (010) -Ga2O3 Two-Dimensional Electron Gas
Adam T. Neal, Yuewei Zhang, Said Elhamri +2
Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau level…
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +5
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel…
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type co…
AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…
Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We…
High Current Density 2D/3D Esaki Tunnel Diodes
Sriram Krishnamoorthy, Edwin W. Lee, Choong Hee Lee +6
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel…
Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance
Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…
Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs
Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy +4
The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures ar…