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physics.app-ph2019
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…
physics.app-ph2017★ 46 cited
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…