Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
arXiv:1706.09492 · doi:10.1063/1.4993569
Abstract
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.
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- Electron Mobility in Monoclinic β-Ga2O3 - Effect of Plasmon-phonon Coupling, Anisotropy, and Confinement
- Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
- Highly tunable polarization-engineered two-dimensional electron gas in -AlGaO3 / -Ga2O3 heterostructures
- Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
- MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
- A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors
- Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
- Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
- Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices
- Charge trap layer enabled positive tunable V in -GaO gate stacks for enhancement mode transistors
- Growth and Characterization of Homoepitaxial -GaO Layers
- Computational design of optimal heterostructures for -GaO
- Zeeman Spin-Splitting in the (010) -Ga2O3 Two-Dimensional Electron Gas
- Full-band Monte Carlo simulation of two-dimensional electron gas in (AlGa)O/GaO heterostructures
- Origin of donor compensation in monoclinic (AlGaO alloys