313 citations · 313 across the 1 of their papers we have counts for
4 papers
Charge trap layer enabled positive tunable V in -GaO gate stacks for enhancement mode transistors
Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2
-GaO based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…
Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
Chandan Joishi, Zhanbo Xia, John S. Jamison +4
We introduce a deep-recessed gate architecture in -GaO delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…