C. Joishi

activity

20172026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 422 across the 16 of their papers we have counts for

collaborators

Showing 2023Show all

2 papers · 1 filter

physics.app-ph2023

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia +2

We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The…

physics.app-ph2023★ 30 cited

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3

$β$ -Ga $_{2}$ O $_{3}$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

β-Ga2​O3​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching