C. Joishi

activity

20172026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 422 across the 16 of their papers we have counts for

collaborators

Showing 2020Show all

2 papers · 1 filter

physics.app-ph2020★ 10 cited

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors

Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2

$β$ -Ga $_{2}$ O $_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…

cond-mat.mtrl-sci2020★ 37 cited

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation

Chandan Joishi, Zhanbo Xia, John S. Jamison +4

We introduce a deep-recessed gate architecture in $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…

Charge trap layer enabled positive tunable Vfb​ in β-Ga2​O3​ gate stacks for enhancement mode transistors

Deep-recessed β-Ga2​O3​ delta-doped field effect transistors with in situ epitaxial passivation

Charge trap layer enabled positive tunable V $_{f b}$ in $β$ -Ga $_{2}$ O $_{3}$ gate stacks for enhancement mode transistors

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation