313 citations · 422 across the 16 of their papers we have counts for
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Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye +12
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and…
High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt +8
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency…
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Seungheon Shin, Kyle Liddy, Yinxuan Zhu +5
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are impo…