313 citations · 422 across the 16 of their papers we have counts for
Showing 2026Show all
2 papers · 1 filter
physics.app-ph2026
Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2
We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…
physics.app-ph2026
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan +9
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using…