$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Sushovan Dhara; Nidhin Kurian Kalarickal; Ashok Dheenan; Sheikh Ifatur Rahman; Chandan Joishi; Siddharth Rajan

doi:10.1063/5.0151808

paper

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

arXiv:2303.04870 · doi:10.1063/5.0151808

Abstract

$β$ -Ga $_{2}$ O $_{3}$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$ -Ga $_{2}$ O $_{3}$ vertical power devices.

10 pages, 5 figures

References in corpus (2)

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_{2}$ O $_{3}$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$
Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Cited by in corpus (2)

LPCVD based Plasma Damage Free in situ etching of $β$ -Ga $_{2}$ O $_{3}$ using Solid Source Gallium
Quasi-Vertical $β$ -Ga $_{2}$ O $_{3}$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching

β-Ga2​O3​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Abstract

References in corpus (2)

Cited by in corpus (2)

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching