Ashok Dheenan

most cited

β

-Ga

_{2}

_{3}

Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

30 citations · 33 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

physics.app-ph2023

Demonstration of a monocrystalline GaAs- $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction

Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction by employing semiconductor grafting technology. The heter…

physics.app-ph2023★ 3 cited

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Jie Zhou, Ashok Dheenan, Jiarui Gong +13

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…

physics.app-ph2023★ 30 cited

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan +3

$β$ -Ga $_{2}$ O $_{3}$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demon…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Demonstration of a monocrystalline GaAs-β-Ga2​O3​ p-n heterojunction

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

β-Ga2​O3​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Demonstration of a monocrystalline GaAs- $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux