Ashok Dheenan

most cited

β

-Ga

_{2}

_{3}

Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

30 citations · 33 across the 5 of their papers we have counts for

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2 papers · 1 filter

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux