Demonstration of a monocrystalline GaAs-$\beta$-Ga${}_2$O${}_3$ p-n heterojunction

Abstract

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga${}_2$O${}_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al${}_2$O${}_3$-coated n-type$\beta$-Ga${}_2$O${}_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm${}^2$ along with a low ON resistance of 2 m$\Omega \cdot$cm${}^2$.

14 pages, 5 figures