1 citations · 1 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2026
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…
physics.app-ph2024★ 1 cited
Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Jie Zhou, Yifan Wang, Ziqian Yao +13
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…
physics.app-ph2023
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/-GaO p-n heterojunction by employing semiconductor grafting technology. The heter…