69 citations · 105 across the 14 of their papers we have counts for
15 papers
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…
Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
Jie Zhou, Haibo Wang, Yifu Guo +19
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, th…
Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Jie Zhou, Qiming Zhang, Jiarui Gong +14
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…
Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Jie Zhou, Yifan Wang, Ziqian Yao +13
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…
Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Jie Zhou, Daniel Vincent, Sudip Acharya +16
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Yang Liu, Jiarui Gong, Sudip Acharya +12
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…
AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO
Yang Liu, Yiran Li, Sudip Acharya +9
This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
Haris Naeem Abbasi, Jie Zhou, Ding Wang +9
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offeri…
Band alignment of grafted monocrystalline Si (001)/-GaO (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Jiarui Gong, Jie Zhou, Ashok Dheenan +11
Beta-phase gallium oxide (-GaO) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/-GaO p-n heterojunction by employing semiconductor grafting technology. The heter…
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
Influences of ALD AlO on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
Jiarui Gong, Jisoo Kim, TienKhee Ng +7
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar tran…
Lattice-mismatched semiconductor heterostructures
Dong Liu, Sang June Cho, Jung-Hun Seo +19
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great ch…
229 nm UV LEDs using p-type silicon for increased hole injection
Dong Liu, Sang June Cho, Jeongpil Park +10
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was…