Jiarui Gong

activity

20172026

most cited229 nm UV LEDs using p-type silicon for increased hole injection

69 citations · 105 across the 14 of their papers we have counts for

collaborators

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3 papers · 1 filter

cond-mat.mtrl-sci2026

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3

Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14

Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…

cond-mat.mtrl-sci2025

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Jie Zhou, Haibo Wang, Yifu Guo +19

Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, th…

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy