3 citations · 5 across the 4 of their papers we have counts for
4 papers
Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction
Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung +12
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Aval…
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/-GaO p-n heterojunction by employing semiconductor grafting technology. The heter…
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…