Jiarui Gong

activity

20172026

most cited229 nm UV LEDs using p-type silicon for increased hole injection

69 citations · 105 across the 14 of their papers we have counts for

collaborators

Showing 2023Show all

4 papers · 1 filter

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

physics.app-ph2023

Demonstration of a monocrystalline GaAs- $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction

Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction by employing semiconductor grafting technology. The heter…

physics.app-ph2023★ 3 cited

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Jie Zhou, Ashok Dheenan, Jiarui Gong +13

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Demonstration of a monocrystalline GaAs-β-Ga2​O3​ p-n heterojunction

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Demonstration of a monocrystalline GaAs- $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting