Metal$/BaTi{O}_3/\beta -G{a}_2{O}_3$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Abstract

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $\beta$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.

References in corpus (1)

• Intrinsic Electron Mobility Limits in beta-Ga2O3

Cited by in corpus (10)

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• Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $\beta$-Ga${}_2$O${}_3$ and $\beta$-(Al${}_x$Ga${}_1-x$)${}_2$ O${}_3$ Films
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• Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy
• Nb${}_2$O${}_5$ high-k dielectric enabled electric field engineering of $\beta$-Ga${}_2$O${}_3$ metal-insulator-semiconductor (MIS) diode
• Electro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management
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